The local metallicity of gadolinium doped compound semiconductors

Hydrogen Local Vibrational Modes in Compound Semiconductors

Local vibrational mode (LVM) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopanthydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example, hydrogen binds to a host nitrogen which is adjacent to the magnesium acceptor. In GaP and ZnSe, it has been demonstrated that the temperature depend...

Local Vibrational Mode Spectroscopy of Hydrogen in Compound Semiconductors

Infrared (IR) and Raman spectroscopy are useful techniques for characterizing hydrogen-related defects in semiconductors. This paper will focus on hydrogen in compound semiconductors such as AlSb, GaAs, GaN, InP, and ZnO. In most compound semiconductors studied to date, hydrogen forms neutral complexes with donors or acceptors. In GaN:Mg grown by metalorganic chemical vapor deposition, for exam...

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Doped Semiconductors: Role of Disorder